BAS70SV — 70 V Dual-S
chottky Barrier Diodes
? 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAS70SV Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
Figure 3. Junction Capacitance
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TA= 150 oC
TA= 25 oC
TA= 75 oC
TA= 125 oC
Forward Voltage, VF[V]
Forward Current, I
F
[mA]
10 20 30 40 50 60 70 80 90
1
10
100
1000
10000
100000
1000000
TA=150 oC
TA=125 oC
TA=25 oC
R
everse
C
urren
t
,
I
R
[
n
A]
Reverse Voltage, VR[V]
TA=75 oC
0246810
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
f = 1MHz
Juntion Capacitance, C
J
[pF]
Reverse Voltage, VR[V]
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